Invention Grant
- Patent Title: Semiconductor structure and a method for manufacturing the same
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Application No.: US13185948Application Date: 2011-07-19
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Publication No.: US08564099B2Publication Date: 2013-10-22
- Inventor: Chieh-Chih Chen , Cheng-Chi Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant: Chieh-Chih Chen , Cheng-Chi Lin , Shih-Chin Lien , Shyi-Yuan Wu
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/866
- IPC: H01L29/866
Abstract:
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. The second doped region and the third doped region are separated from each other by the first doped region. The third doped region has a first portion and a second portion adjacent to each other. The first portion and the second portion are respectively adjacent to and away from the second doped region. A dopant concentration of the first portion is bigger than a dopant concentration of the second portion.
Public/Granted literature
- US20130020680A1 SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-01-24
Information query
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