发明授权
- 专利标题: Method of initializing magnetic memory element
- 专利标题(中): 初始化磁记忆元件的方法
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申请号: US13120626申请日: 2009-10-29
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公开(公告)号: US08565011B2公开(公告)日: 2013-10-22
- 发明人: Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
- 申请人: Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
- 申请人地址: JP Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-287164 20081107
- 国际申请: PCT/JP2009/068573 WO 20091029
- 国际公布: WO2010/053039 WO 20100514
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.
公开/授权文献
- US20110199818A1 METHOD OF INITIALIZING MAGNETIC MEMORY ELEMENT 公开/授权日:2011-08-18
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