发明授权
- 专利标题: CMOS gate structures fabricated by selective oxidation
- 专利标题(中): 通过选择性氧化制造的CMOS栅极结构
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申请号: US12186075申请日: 2008-08-05
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公开(公告)号: US08568604B2公开(公告)日: 2013-10-29
- 发明人: Bruce B. Doris , Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人: Bruce B. Doris , Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Parashos Kalaitzis
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; H01L21/302
摘要:
A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial material that is deposited over a structure layer and covered by a cover layer. The sacrificial material layer and the cover layer are patterned with conventional resist and etched to form a sacrificial mandrel. The edges of the mandrel are oxidized or nitrided in a plasma at low temperature, after which the material layer and the cover layer are stripped, leaving sublithographic sidewalls. The sidewalls are used as hardmasks to etch sublithographic gate structures in the gate conductor layer.
公开/授权文献
- US20080286971A1 CMOS Gate Structures Fabricated by Selective Oxidation 公开/授权日:2008-11-20