Invention Grant
- Patent Title: Semiconductor device and method of dicing semiconductor devices
- Patent Title (中): 半导体器件切割半导体器件及方法
-
Application No.: US13216825Application Date: 2011-08-24
-
Publication No.: US08569086B2Publication Date: 2013-10-29
- Inventor: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
- Applicant: Jing-Cheng Lin , Chih-Wei Wu , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method and apparatus for separating a substrate into individual dies and the resulting structure is provided. A modification layer, such as an amorphous layer, is formed within the substrate. A laser focused within the substrate may be used to create the modification layer. The modification layer creates a relatively weaker region that is more prone to cracking than the surrounding substrate material. As a result, the substrate may be pulled apart into separate sections, causing cracks the substrate along the modification layers. Dice or other components may be attached to the substrate before or after separation.
Public/Granted literature
- US20130049234A1 Substrate Dicing Public/Granted day:2013-02-28
Information query
IPC分类: