发明授权
- 专利标题: Method for manufacturing thin film transistor
- 专利标题(中): 制造薄膜晶体管的方法
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申请号: US12617406申请日: 2009-11-12
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公开(公告)号: US08569120B2公开(公告)日: 2013-10-29
- 发明人: Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo , Mitsuhiro Ichijo , Tomokazu Yokoi
- 申请人: Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo , Mitsuhiro Ichijo , Tomokazu Yokoi
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2008-293954 20081117
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.
公开/授权文献
- US20100124804A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 公开/授权日:2010-05-20