Invention Grant
- Patent Title: Flash lamp annealing crystallization for large area thin films
- Patent Title (中): 闪光灯退火结晶用于大面积薄膜
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Application No.: US12919681Application Date: 2009-02-27
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Publication No.: US08569155B2Publication Date: 2013-10-29
- Inventor: James S. Im
- Applicant: James S. Im
- Applicant Address: US NY New York
- Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee Address: US NY New York
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- International Application: PCT/US2009/035566 WO 20090227
- International Announcement: WO01/73769 WO 20011004
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing.
Public/Granted literature
- US20110101368A1 FLASH LAMP ANNEALING CRYSTALLIZATION FOR LARGE AREA THIN FILMS Public/Granted day:2011-05-05
Information query
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