Invention Grant
- Patent Title: Conductive bump structure on substrate and fabrication method thereof
- Patent Title (中): 基板上的导电凸块结构及其制造方法
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Application No.: US13644006Application Date: 2012-10-03
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Publication No.: US08569162B2Publication Date: 2013-10-29
- Inventor: Feng-Lung Chien , Yi-Hung Lin , Yi-Hsin Chen
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101109805A 20120322
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A conductive bump structure is formed on a substrate having a plurality of bonding pads and a first insulating layer thereon. The first insulating layer has a plurality of openings formed therein for exposing the bonding pads and a conductive post is formed on the bonding pads exposed through the openings. Therein, a gap is formed between the conductive post and the wall of the opening such that no contact occurs between the conductive post and the first insulating layer, thereby preventing delamination of the conductive bump structure caused by stresses concentrating on an interface of different materials as in the prior art.
Public/Granted literature
- US20130249082A1 CONDUCTIVE BUMP STRUCTURE ON SUBSTRATE AND FABRICATION METHOD THEREOF Public/Granted day:2013-09-26
Information query
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