Invention Grant
- Patent Title: Semiconductor device including an active region and two layers having different stress characteristics
- Patent Title (中): 半导体器件包括具有不同应力特性的有源区和两层
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Application No.: US11613326Application Date: 2006-12-20
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Publication No.: US08569858B2Publication Date: 2013-10-29
- Inventor: Brian A. Winstead , Vance H. Adams , Paul A. Grudowski
- Applicant: Brian A. Winstead , Vance H. Adams , Paul A. Grudowski
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088
Abstract:
An integrated circuit includes a device including an active region of the device, where the active region of the device includes a channel region having a transverse and a lateral direction. The device further includes an isolation region adjacent to the active region in a traverse direction from the active region, where the isolation region includes a first region located in a transverse direction to the channel region. The isolation region further includes a second region located in a lateral direction from the first region. The first region of the isolation region is under a stress of a first type and the second region of the isolative region is one of under a lesser stress of the first type or of under a stress of a second type being opposite of the first type.
Public/Granted literature
- US20080150072A1 INTEGRATED CIRCUIT HAVING TENSILE AND COMPRESSIVE REGIONS Public/Granted day:2008-06-26
Information query
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