发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13396934申请日： 2012-02-15
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公开(公告)号： US08570780B2公开(公告)日： 2013-10-29
- 发明人: Shinsuke Godo , Atsunobu Kawamoto
- 申请人： Shinsuke Godo , Atsunobu Kawamoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-124895 20110603
- 主分类号： H02H7/122
- IPC分类号： H02H7/122 ; H02H9/04
摘要：
A semiconductor device includes: a parallel connection structure 1 between a first node and a second node; a first snubber device and a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section. One terminal of the first snubber device is connected through the first node to one end of the parallel connection structure, the opposite terminal of the first snubber device is connected through a third node to one terminal of the second snubber device, and the opposite terminal of the second snubber device is connected through the second node to the opposite end of the parallel connection structure. Electric power is fed back to the power source section through the second and third nodes.
公开/授权文献
- US20120307532A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-12-06
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