发明授权
- 专利标题： Z-direction decoding for three dimensional memory array
- 专利标题（中）： 用于三维存储器阵列的Z方向解码
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申请号： US13324708申请日： 2011-12-13
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公开(公告)号： US08570806B2公开(公告)日： 2013-10-29
- 发明人: Guanru Lee
- 申请人： Guanru Lee
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes Beffel & Wolfeld LLP
- 代理商 Kenta Suzue
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
The switch transistors in the NAND strings have combinations of threshold voltage levels that vary across the levels of a three dimensional memory array. A bias arrangement is applied to the select lines electrically coupled to the switch transistors. The NAND strings on a particular level of a three dimensional memory array are selected. The NAND strings on other levels are deselected.
公开/授权文献
- US20130148427A1 Z-Direction Decoding for Three Dimensional Memory Array 公开/授权日：2013-06-13
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