Method to form a 3D semiconductor device and structure

Invention Grant

US08574929B1 Method to form a 3D semiconductor device and structure 有权

Title translation: 形成3D半导体器件和结构的方法

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Patent Title: Method to form a 3D semiconductor device and structure
Patent Title (中): 形成3D半导体器件和结构的方法
Application No.: US13678584

Application Date: 2012-11-16
Publication No.: US08574929B1

Publication Date: 2013-11-05
Inventor: Zvi Or-Bach , Deepak Sekar , Brian Cronquist
Applicant: Monolithic 3D Inc.
Applicant Address: US CA San Jose
Assignee: Monolithic 3D Inc.
Current Assignee: Monolithic 3D Inc.
Current Assignee Address: US CA San Jose
Main IPC: H01L21/477
IPC: H01L21/477

Method to form a 3D semiconductor device and structure

Abstract:

A method to form a monolithic 3D device including: processing a first layer including first mono-crystal transistors; transferring a second mono-crystal layer on top of the first layer including first mono-crystal transistors by using ion-cut layer transfer; and repairing the damage caused by the ion-cut by using optical annealing.

Abstract(Chinese):

一种形成单片3D器件的方法，包括：处理包括第一单晶晶体管的第一层; 通过使用离子切割层转印在包括第一单晶体晶体管的第一层的顶部上转移第二单晶层; 并通过光学退火修复由离子切割引起的损伤。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/477	.....用于改善半导体材料性能的热处理，例如退火、烧结（H01L21/36至H01L21/449，H01L21/461至H01L21/475优先）