Invention Grant
US08574945B2 Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
有权
阵列相互绝缘的盖革型雪崩光电二极管及相应的制造工艺
- Patent Title: Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
- Patent Title (中): 阵列相互绝缘的盖革型雪崩光电二极管及相应的制造工艺
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Application No.: US13241114Application Date: 2011-09-22
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Publication No.: US08574945B2Publication Date: 2013-11-05
- Inventor: Delfo Nunziato Sanfilippo , Emilio Antonio Sciacca , Piero Giorgio Fallica , Salvatore Antonio Lombardo
- Applicant: Delfo Nunziato Sanfilippo , Emilio Antonio Sciacca , Piero Giorgio Fallica , Salvatore Antonio Lombardo
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITTO2008A0045 20080118
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.
Public/Granted literature
- US20120009722A1 ARRAY OF MUTUALLY INSULATED GEIGER-MODE AVALANCHE PHOTODIODES, AND CORRESPONDING MANUFACTURING PROCESS Public/Granted day:2012-01-12
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