Invention Grant
- Patent Title: Templated circuitry fabrication
- Patent Title (中): 模板电路制造
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Application No.: US13193580Application Date: 2011-07-28
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Publication No.: US08575025B2Publication Date: 2013-11-05
- Inventor: David Fitzpatrick , Kevin Dooley , Lorraine Byrne
- Applicant: David Fitzpatrick , Kevin Dooley , Lorraine Byrne
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of making templated circuitry employs a template system that includes a template of an insulator material on a carrier having a conductive surface. The template includes multiple levels and multiple regions, wherein a first level exposes the conductive surface of the carrier. A first metal is electrochemically deposited on the conductive surface in first regions of the first level. A circuit material is deposited to cover the first metal. The template is etched until a second level of the template exposes the conductive surface in second regions on opposite sides of the first regions. A second metal is electrochemically deposited on the conductive surface in the second regions. The template of deposited materials is transferred from the carrier to a substrate.
Public/Granted literature
- US20130029481A1 TEMPLATED CIRCUITRY FABRICATION Public/Granted day:2013-01-31
Information query
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