Invention Grant
- Patent Title: Asymmetric MIM capacitor for DRAM devices
- Patent Title (中): 用于DRAM器件的不对称MIM电容器
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Application No.: US13692460Application Date: 2012-12-03
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Publication No.: US08575671B2Publication Date: 2013-11-05
- Inventor: Hanhong Chen , Hiroyuki Ode
- Applicant: Intermolecular, Inc. , Elpida Memory, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a composition that is resistant to oxidation during subsequent anneal steps and have rutile templating capability. Examples include SnO2 and RuO2. The capacitor stack including the bottom layer is subjected to a PMA treatment to reduce the oxygen vacancies in the dielectric layer and reduce the interface states at the dielectric/second electrode interface. The other component of the bilayer (i.e. top layer) is a high work function, high conductivity metal or conductive metal compound.
Public/Granted literature
- US20130093051A1 Asymmetric MIM Capacitor for DRAM Devices Public/Granted day:2013-04-18
Information query
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