利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US08575682B2 Three dimensional semiconductor memory devices and methods of forming the same 有权
三维半导体存储器件及其形成方法

Three dimensional semiconductor memory devices and methods of forming the same
摘要：
Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
摘要（中）：

提供三维半导体存储器件及其形成方法。 该器件包括衬底，堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。 有源图案可以包括设置在有源图案的上部的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。 扩散阻止掺杂区域可以是掺杂有碳的区域。

公开/授权文献
信息查询
Espacenet
0/0