发明授权
US08575719B2 Silicon nitride antifuse for use in diode-antifuse memory arrays
有权
用于二极管 - 反熔丝存储器阵列的氮化硅反熔丝
- 专利标题: Silicon nitride antifuse for use in diode-antifuse memory arrays
- 专利标题(中): 用于二极管 - 反熔丝存储器阵列的氮化硅反熔丝
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申请号: US10610804申请日: 2003-06-30
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公开(公告)号: US08575719B2公开(公告)日: 2013-11-05
- 发明人: Mark G. Johnson , N. Johan Knall , S. Brad Herner
- 申请人: Mark G. Johnson , N. Johan Knall , S. Brad Herner
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk 3D LLC
- 当前专利权人: SanDisk 3D LLC
- 当前专利权人地址: US CA Milpitas
- 代理机构: Dugan & Dugan, PC
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L29/04 ; H01L29/10 ; H01L31/036
摘要:
Silicon nitride antifuses can be advantageously used in memory arrays employing diode-antifuse cells. Silicon nitride antifuses can be ruptured faster and at a lower breakdown field than antifuses formed of other materials, such as silicon dioxide. Examples are given of monolithic three dimensional memory arrays using silicon nitride antifuses with memory cells disposed in rail-stacks and pillars, and including PN and Schottky diodes. Pairing a silicon nitride antifuse with a low-density, high-resistivity conductor gives even better device performance.