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发明授权
US08575753B2 Semiconductor device having a conductive structure including oxide and non oxide portions 有权
具有包括氧化物和非氧化物部分的导电结构的半导体器件

Semiconductor device having a conductive structure including oxide and non oxide portions
摘要：
A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.
摘要（中）：

半导体器件包括设置在衬底上的层间绝缘层，所述层间绝缘层包括露出衬底的开口，设置在所述开口内的阻挡层图案以及设置在所述阻挡层图案上的导电图案，所述导电图案具有氧化 从开口延伸的部分和开口内的非氧化部分，其中导电图案的宽度由阻挡层图案的厚度确定。

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