Invention Grant
- Patent Title: MEMS devices with an etch stop layer
- Patent Title (中): 具有蚀刻停止层的MEMS器件
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Application No.: US12009389Application Date: 2008-01-17
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Publication No.: US08576474B2Publication Date: 2013-11-05
- Inventor: Fusao Ishii
- Applicant: Fusao Ishii
- Agent Bo-In Lin
- Main IPC: G02B26/00
- IPC: G02B26/00 ; G02B26/08

Abstract:
This invention discloses a MEMS device supported on a substrate formed with electric circuit thereon. The MEMS device includes at least an electrode connected to the circuit and at least a movable element that is controlled by the electrode. The MEMS device further includes a conformal protective layer over the electrode and the circuit wherein the protective layer is semiconductor-based material. In a preferred embodiment, the MEMS device is a micromirror and the semiconductor material is one of a group of materials consisting of Si, SiC, Ge, SiGe, SiNi and SiW.
Public/Granted literature
- US20080218844A1 MEMS devices with an etch stop layer Public/Granted day:2008-09-11
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