Invention Grant
US08576474B2 MEMS devices with an etch stop layer 失效
具有蚀刻停止层的MEMS器件

  • Patent Title: MEMS devices with an etch stop layer
  • Patent Title (中): 具有蚀刻停止层的MEMS器件
  • Application No.: US12009389
    Application Date: 2008-01-17
  • Publication No.: US08576474B2
    Publication Date: 2013-11-05
  • Inventor: Fusao Ishii
  • Applicant: Fusao Ishii
  • Agent Bo-In Lin
  • Main IPC: G02B26/00
  • IPC: G02B26/00 G02B26/08
MEMS devices with an etch stop layer
Abstract:
This invention discloses a MEMS device supported on a substrate formed with electric circuit thereon. The MEMS device includes at least an electrode connected to the circuit and at least a movable element that is controlled by the electrode. The MEMS device further includes a conformal protective layer over the electrode and the circuit wherein the protective layer is semiconductor-based material. In a preferred embodiment, the MEMS device is a micromirror and the semiconductor material is one of a group of materials consisting of Si, SiC, Ge, SiGe, SiNi and SiW.
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