发明授权
US08576637B2 Memory module including memory buffer and memory system having the same
有权
内存模块包括内存缓冲区和具有相同内存的系统
- 专利标题: Memory module including memory buffer and memory system having the same
- 专利标题(中): 内存模块包括内存缓冲区和具有相同内存的系统
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申请号: US12959504申请日: 2010-12-03
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公开(公告)号: US08576637B2公开(公告)日: 2013-11-05
- 发明人: Soon-Deok Jang , Seok-Il Kim , Seung-Jin Seo , You-Keun Han
- 申请人: Soon-Deok Jang , Seok-Il Kim , Seung-Jin Seo , You-Keun Han
- 申请人地址: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Consulting, PLLC
- 优先权: KR10-2010-0003815 20100115
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
A memory buffer selecting between a parallel test mode and a mode register control mode, and a memory module and memory system having the memory buffer are disclosed. The memory buffer includes a control circuit and a mode selecting circuit. The control circuit generates a mode control signal based on a first chip selecting signal, a second chip selecting signal, a row address signal, a column address signal, and a write enable signal. The mode selecting circuit selects one of a parallel test mode and a mode register control mode in response to the mode control signal.
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