发明授权
- 专利标题: Magnetron design for RF/DC physical vapor deposition
- 专利标题(中): 用于RF / DC物理气相沉积的磁控管设计
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申请号: US13163817申请日: 2011-06-20
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公开(公告)号: US08580094B2公开(公告)日: 2013-11-12
- 发明人: Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
- 申请人: Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboada
- 代理商 Alan Taboada
- 主分类号: C23C14/35
- IPC分类号: C23C14/35
摘要:
Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
公开/授权文献
- US20110311735A1 MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION 公开/授权日:2011-12-22