发明授权
- 专利标题： Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
- 专利标题（中）： 制造具有热敏补充材料的沟槽型半导体器件的方法
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申请号： US11962523申请日： 2007-12-21
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公开(公告)号： US08580651B2公开(公告)日： 2013-11-12
- 发明人: Takeshi Ishiguro
- 申请人： Takeshi Ishiguro
- 申请人地址： GB Belfast, Northern Ireland
- 专利权人： Icemos Technology Ltd.
- 当前专利权人： Icemos Technology Ltd.
- 当前专利权人地址： GB Belfast, Northern Ireland
- 代理机构： Panitch Schwarze Belisario & Nadel LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.
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