发明授权
US08580660B2 Double and triple gate MOSFET devices and methods for making same
有权
双栅极和三栅极MOSFET器件及其制造方法
- 专利标题： Double and triple gate MOSFET devices and methods for making same
- 专利标题（中）： 双栅极和三栅极MOSFET器件及其制造方法
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申请号： US13523603申请日： 2012-06-14
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公开(公告)号： US08580660B2公开(公告)日： 2013-11-12
- 发明人: Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
- 申请人： Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.
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