Invention Grant
- Patent Title: Pixel structure having storage capacitance of the capacitor
- Patent Title (中): 具有电容器的存储电容的像素结构
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Application No.: US13402883Application Date: 2012-02-23
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Publication No.: US08581255B2Publication Date: 2013-11-12
- Inventor: Chuan-Sheng Wei , Chau-Shiang Huang , Wu-Liu Tsai , Chih-Hung Lin , Maw-Song Chen
- Applicant: Chuan-Sheng Wei , Chau-Shiang Huang , Wu-Liu Tsai , Chih-Hung Lin , Maw-Song Chen
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100142006A 20111117
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L29/15

Abstract:
A pixel structure includes a first electrode on a substrate, a first insulation layer covering the first electrode, a gate located on the first insulation layer, a second electrode located on the first insulation layer above the first electrode, a second insulation layer covering the gate and the second electrode, a semiconductor layer located on the second insulation layer above the gate, a source and a drain that are located on the semiconductor layer, a third electrode, a third insulation layer, and a pixel electrode. The third electrode is located on the second insulation layer above the second electrode and electrically connected to the first electrode. The third insulation layer covers the source, the drain, and the third electrode. The pixel electrode is located on the third insulation layer and electrically connected to the drain.
Public/Granted literature
- US20130126871A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-05-23
Information query
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