Invention Grant
US08581339B2 Structure of NPN-BJT for improving punch through between collector and emitter
有权
用于改善集电极和发射极之间穿透的NPN-BJT的结构
- Patent Title: Structure of NPN-BJT for improving punch through between collector and emitter
- Patent Title (中): 用于改善集电极和发射极之间穿透的NPN-BJT的结构
-
Application No.: US13204780Application Date: 2011-08-08
-
Publication No.: US08581339B2Publication Date: 2013-11-12
- Inventor: Chin-Wei Chang , Ching-Lin Chan , Chin-Shien Lu , Ming-Tung Lee , Shuo-Lun Tu
- Applicant: Chin-Wei Chang , Ching-Lin Chan , Chin-Shien Lu , Ming-Tung Lee , Shuo-Lun Tu
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/739
Abstract:
A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector electrode, and a conductive layer. The emitter electrode, the base electrode and the collector electrode are separated from each other by the well region. The conductive layer is on the well region between the base electrode and the collector electrode.
Public/Granted literature
- US20130037914A1 NOVEL STRUCTURE OF NPN-BJT FOR IMPROVING PUNCH THROUGH BETWEEN COLLECTOR AND EMITTER Public/Granted day:2013-02-14
Information query
IPC分类:
