Invention Grant
US08581387B1 Through wire interconnect (TWI) having bonded connection and encapsulating polymer layer
有权
具有接合连接和封装聚合物层的通线互连(TWI)
- Patent Title: Through wire interconnect (TWI) having bonded connection and encapsulating polymer layer
- Patent Title (中): 具有接合连接和封装聚合物层的通线互连(TWI)
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Application No.: US13771440Application Date: 2013-02-20
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Publication No.: US08581387B1Publication Date: 2013-11-12
- Inventor: David R. Hembree , Alan G. Wood
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agent Stephen A. Gratton
- Main IPC: H01L23/04
- IPC: H01L23/04

Abstract:
A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from a first side to a second side thereof, and a wire in the via electrically insulated from the semiconductor substrate having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate. The through wire interconnect also includes a first contact on the wire proximate to the first side of the semiconductor substrate, a second contact on the second end of the wire, and a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed. The through wire interconnect can also include a bonding member bonded to the first end of the wire and to the substrate contact having a tip portion forming the first contact.
Information query
IPC分类: