发明授权
- 专利标题： Metal bump structure
- 专利标题（中）： 金属凸块结构
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申请号： US13192826申请日： 2011-07-28
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公开(公告)号： US08581399B2公开(公告)日： 2013-11-12
- 发明人: Tsung-Fu Tsai , Min-Feng Ku , Yian-Liang Kuo
- 申请人： Tsung-Fu Tsai , Min-Feng Ku , Yian-Liang Kuo
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L23/485
- IPC分类号： H01L23/485
摘要：
A semiconductor device comprises a substrate comprising a major surface and a plurality of metal bumps on the major surface. Each of the plurality of metal bumps comprises a metal via on the major surface and a metal pillar on the metal via having an overlay offset between the metal pillar and metal via. A first metal bump of the metal bumps has a first overlay offset and a second metal bump of the metal bumps farther than the first metal bump to a centroid of the substrate has a second overlay offset greater than the first overlay offset.
公开/授权文献
- US20130026621A1 METAL BUMP STRUCTURE 公开/授权日：2013-01-31
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