发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US13512465申请日: 2012-05-16
-
公开(公告)号: US08581622B1公开(公告)日: 2013-11-12
- 发明人: Yasuhiro Ikeda , Yutaka Uematsu , Satoshi Muraoka
- 申请人: Yasuhiro Ikeda , Yutaka Uematsu , Satoshi Muraoka
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 国际申请: PCT/JP2012/003188 WO 20120516
- 主分类号: H03K17/16
- IPC分类号: H03K17/16
摘要:
To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.
公开/授权文献
- US20130307582A1 SEMICONDUCTOR DEVICE 公开/授权日:2013-11-21
信息查询