Invention Grant
- Patent Title: Magnetic sensor having a high spin polarization reference layer
- Patent Title (中): 具有高自旋极化参考层的磁传感器
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Application No.: US13488219Application Date: 2012-06-04
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Publication No.: US08582253B1Publication Date: 2013-11-12
- Inventor: Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
- Applicant: Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Zhitao Diao , Christian Kaiser , Cheng-Han Yang
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.
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