发明授权
US08582383B2 Semiconductor memory device with hidden refresh and method for controlling the same
有权
具有隐藏刷新的半导体存储器件及其控制方法
- 专利标题: Semiconductor memory device with hidden refresh and method for controlling the same
- 专利标题(中): 具有隐藏刷新的半导体存储器件及其控制方法
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申请号: US13070034申请日: 2011-03-23
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公开(公告)号: US08582383B2公开(公告)日: 2013-11-12
- 发明人: Hiroyuki Takahashi
- 申请人: Hiroyuki Takahashi
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Foley & Lardner LLP
- 优先权: JP2010-094290 20100415
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A semiconductor memory device includes a memory cell array having plural memory cells that require a refresh operation when retaining data; a read/write control unit that performs read-access or write-access of memory cell address specified for the memory cell array based on instructions from the outside; a refresh control unit that performs hidden-refresh of memory cells without control from the outside; and a schedule control unit that makes the refresh control unit perform hidden-refresh after the read/write control unit read-accesses the memory cell array, and that also makes the refresh control unit perform hidden-refresh before the read/write access control unit performs write-access.
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