发明授权
US08582386B2 Internal voltage generator and semiconductor memory device including the same
有权
内部电压发生器和包括其的半导体存储器件
- 专利标题： Internal voltage generator and semiconductor memory device including the same
- 专利标题（中）： 内部电压发生器和包括其的半导体存储器件
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申请号： US13592902申请日： 2012-08-23
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公开(公告)号： US08582386B2公开(公告)日： 2013-11-12
- 发明人: Sang-Jin Byeon
- 申请人： Sang-Jin Byeon
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2008-0034110 20080414
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.
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