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发明授权
US08586151B2 Process for the preparation of photoluminescent nanostructured silicon thin films using radio frequency plasma discharge 有权
使用射频等离子体放电制备光致发光纳米结构硅薄膜的方法

Process for the preparation of photoluminescent nanostructured silicon thin films using radio frequency plasma discharge
摘要：
A process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.
摘要（中）：

一种使用射频（RF）等离子体放电制备纳米结构硅薄膜的方法，可用于诸如发光二极管，激光器等发光器件，可以精确控制硅的纳米晶体尺寸及其均匀分布，而无需掺杂 用于在室温下获得有效的光致发光的等离子体处理。

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