发明授权
- 专利标题： Use of CL2 and/or HCL during silicon epitaxial film formation
- 专利标题（中）： 在硅外延膜形成期间使用CL2和/或HCL
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申请号： US13149865申请日： 2011-05-31
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公开(公告)号： US08586456B2公开(公告)日： 2013-11-19
- 发明人: Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- 申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Dugan & Dugan, PC
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; H01L21/20 ; H01L21/36
摘要：
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
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