Invention Grant
US08586962B2 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
有权
交叉点存储器阵列，其制造方法，用于压印处理的主机以及制造主机的方法
- Patent Title: Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
- Patent Title (中): 交叉点存储器阵列，其制造方法，用于压印处理的主机以及制造主机的方法
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Application No.: US13338902Application Date: 2011-12-28
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Publication No.: US08586962B2Publication Date: 2013-11-19
- Inventor: Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
- Applicant: Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0097788 20081006; KR10-2008-0111218 20081110; KR10-2009-0012118 20090213
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A cross point memory array includes a structure in which holes are formed in an insulating layer and a storage node is formed in each of the holes. The storage node may include a memory resistor and a switching structure. The master for an imprint process used to form the cross-point memory array includes various pattern shapes, and the method of manufacturing the master uses various etching methods.
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