- 专利标题： Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device
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申请号： US12216529申请日： 2008-07-07
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公开(公告)号： US08586978B2公开(公告)日： 2013-11-19
- 发明人: Ki-hwan Kim , Young-soo Park , Bo-soo Kang , Myoung-jae Lee , Chang-bum Lee
- 申请人： Ki-hwan Kim , Young-soo Park , Bo-soo Kang , Myoung-jae Lee , Chang-bum Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce P.L.C.
- 优先权： KR10-2007-0111584 20071102
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/00
摘要：
Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.
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