发明授权
- 专利标题： Magnetoresistive random access memory and method of manufacturing the same
- 专利标题（中）： 磁阻随机存取存储器及其制造方法
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申请号： US13051945申请日： 2011-03-18
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公开(公告)号： US08587043B2公开(公告)日： 2013-11-19
- 发明人: Katsuaki Natori , Koji Yamakawa , Daisuke Ikeno
- 申请人： Katsuaki Natori , Koji Yamakawa , Daisuke Ikeno
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 优先权： JP2010-157175 20100709
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/8246
摘要：
According to one embodiment, a magnetoresistive random access memory includes a magnetoresistive element in a memory cell, the magnetoresistive element including a first metal magnetic layer, a second metal magnetic layer, and an insulation layer interposed between the first and second metal magnetic layers. An area of each of the first and second metal magnetic layers is smaller than an area of the insulation layer.