发明授权
US08587095B2 Method for establishing and closing a trench of a semiconductor component
有权
用于建立和闭合半导体部件的沟槽的方法
- 专利标题： Method for establishing and closing a trench of a semiconductor component
- 专利标题（中）： 用于建立和闭合半导体部件的沟槽的方法
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申请号： US13004638申请日： 2011-01-11
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公开(公告)号： US08587095B2公开(公告)日： 2013-11-19
- 发明人: Jochen Reinmuth , Eckhard Graf
- 申请人： Jochen Reinmuth , Eckhard Graf
- 申请人地址： DE Stuttgart
- 专利权人： Robert Bosch GmbH
- 当前专利权人： Robert Bosch GmbH
- 当前专利权人地址： DE Stuttgart
- 代理机构： Kenyon & Kenyon LLP
- 优先权： DE102010000895 20100114
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L21/764
摘要：
A method for establishing and closing at least one trench of a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one metal layer over the trench to be formed; forming a lattice having lattice openings in the at least one metal layer over the trench to be formed; forming the trench below the metal lattice, and closing the lattice openings over the trench.
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