发明授权
- 专利标题： Through-silicon via and fabrication method thereof
- 专利标题（中）： 硅通孔及其制造方法
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申请号： US13490472申请日： 2012-06-07
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公开(公告)号： US08587131B1公开(公告)日： 2013-11-19
- 发明人: Chi-Wen Huang , Kuo-Hui Su
- 申请人： Chi-Wen Huang , Kuo-Hui Su
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/4763
摘要：
A through silicon via (TSV) structure including a semiconductor substrate; a first inter-metal dielectric (IMD) layer on the semiconductor substrate; a cap layer overlying the IMD layer; a conductive layer extending through the cap layer, the first IMD layer and into the semiconductor substrate; a tungsten film capping a top surface of the conductive layer; a second IMD layer overlying the cap layer and covering the tungsten film; and an interconnect feature in the second IMD layer.
公开/授权文献
- US20130328202A1 THROUGH-SILICON VIA AND FABRICATION METHOD THEREOF 公开/授权日：2013-12-12
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