Invention Grant
- Patent Title: Through-silicon via and fabrication method thereof
- Patent Title (中): 硅通孔及其制造方法
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Application No.: US13490472Application Date: 2012-06-07
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Publication No.: US08587131B1Publication Date: 2013-11-19
- Inventor: Chi-Wen Huang , Kuo-Hui Su
- Applicant: Chi-Wen Huang , Kuo-Hui Su
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/4763
Abstract:
A through silicon via (TSV) structure including a semiconductor substrate; a first inter-metal dielectric (IMD) layer on the semiconductor substrate; a cap layer overlying the IMD layer; a conductive layer extending through the cap layer, the first IMD layer and into the semiconductor substrate; a tungsten film capping a top surface of the conductive layer; a second IMD layer overlying the cap layer and covering the tungsten film; and an interconnect feature in the second IMD layer.
Public/Granted literature
- US20130328202A1 THROUGH-SILICON VIA AND FABRICATION METHOD THEREOF Public/Granted day:2013-12-12
Information query
IPC分类:
