Invention Grant
- Patent Title: Variable gate field-effect transistor and electrical and electronic apparatus including the same
- Patent Title (中): 可变栅场效应晶体管和包括其的电气和电子设备
-
Application No.: US13929831Application Date: 2013-06-28
-
Publication No.: US08587224B1Publication Date: 2013-11-19
- Inventor: Hyun-Tak Kim , Bongjun Kim
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0035892 20100419; KR10-2011-0019643 20110304
- Main IPC: H05B37/02
- IPC: H05B37/02 ; H01L21/8222

Abstract:
Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.
Public/Granted literature
- US20130292753A1 VARIABLE GATE FIELD-EFFECT TRANSISTOR AND ELECTRICAL AND ELECTRONIC APPARATUS INCLUDING THE SAME Public/Granted day:2013-11-07
Information query