Invention Grant
US08587978B2 Nonvolatile memory apparatus, repair circuit for the same, and method for reading code addressable memory data
有权
非易失性存储装置，相同的修复电路和用于读取代码寻址存储器数据的方法
- Patent Title: Nonvolatile memory apparatus, repair circuit for the same, and method for reading code addressable memory data
- Patent Title (中): 非易失性存储装置，相同的修复电路和用于读取代码寻址存储器数据的方法
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Application No.: US12983170Application Date: 2010-12-31
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Publication No.: US08587978B2Publication Date: 2013-11-19
- Inventor: Sang Kyu Lee
- Applicant: Sang Kyu Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0106595 20101029
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C29/04
Abstract:
A nonvolatile memory apparatus includes: a memory cell array including a plurality of planes and configured to store a plurality of code addressable memory (CAM) data in independent planes. A redundancy cell array is configured to replace the memory cell array and a CAM data read unit is configured to read the plurality of CAM data from the respective planes in parallel, in response to a CAM data read command, and store the read data.
Public/Granted literature
Information query
