A method for testing a memory device. The memory device includes a matrix of memory cells having a plurality of rows and columns; the matrix includes a plurality of rows of operative memory cells each one for storing a variable value and at least one row of auxiliary memory cells each one storing a fixed value. The memory device further includes writing circuitry for writing selected values into the operative memory cells, and reading circuitry for reading the values being stored from the operative or auxiliary memory cells. The method includes reading output values from the row of auxiliary memory cells, determining a malfunctioning of the memory device in response to a missing match of the output values with the fixed values, determining a cause of the malfunctioning according to a pattern of reading errors between the output values and the corresponding fixed values, and providing a signal indicative of the cause of the malfunctioning.