发明授权
- 专利标题： Plasma processing method
- 专利标题（中）： 等离子体处理方法
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申请号： US13399030申请日： 2012-02-17
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公开(公告)号： US08591752B2公开(公告)日： 2013-11-26
- 发明人: Takahiro Abe , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
- 申请人： Takahiro Abe , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High Technologies Corporation
- 当前专利权人： Hitachi High Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 优先权： JP2011-267454 20111207
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; B08B9/00
摘要：
A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
公开/授权文献
- US20130146563A1 PLASMA PROCESSING METHOD 公开/授权日：2013-06-13