Invention Grant
- Patent Title: Interface structure for copper-copper peeling integrity
-
Application No.: US13728833Application Date: 2012-12-27
-
Publication No.: US08592300B2Publication Date: 2013-11-26
- Inventor: Cheng-Chung Lin , Chung-Sui Liu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/50
- IPC: H01L23/50
Abstract:
An integrated circuit device is disclosed. An exemplary integrated circuit device includes a first copper layer, a second copper layer, and an interface between the first and second copper layers. The interface includes a flat zone interface region and an intergrowth interface region, wherein the flat zone interface region is less than or equal to 50% of the interface.
Public/Granted literature
- US20130149856A1 Interface Structure for Copper-Copper Peeling Integrity Public/Granted day:2013-06-13
Information query
IPC分类:
