Invention Grant
US08592316B2 Nitride semiconductor substrate, production method therefor and nitride semiconductor device
有权
氮化物半导体衬底，其制造方法和氮化物半导体器件
- Patent Title: Nitride semiconductor substrate, production method therefor and nitride semiconductor device
- Patent Title (中): 氮化物半导体衬底，其制造方法和氮化物半导体器件
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Application No.: US12805477Application Date: 2010-08-02
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Publication No.: US08592316B2Publication Date: 2013-11-26
- Inventor: Yuichi Oshima , Takehiro Yoshida
- Applicant: Yuichi Oshima , Takehiro Yoshida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-089755 20100408
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/18
Abstract:
A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.
Public/Granted literature
- US20110248281A1 Nitride semiconductor substrate, production method therefor and nitride semiconductor device Public/Granted day:2011-10-13
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