Invention Grant
- Patent Title: Multi-ion beam implantation apparatus and method
- Patent Title (中): 多离子束植入装置及方法
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Application No.: US13240951Application Date: 2011-09-22
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Publication No.: US08592785B2Publication Date: 2013-11-26
- Inventor: Nai-Han Cheng , Chin-Hsiang Lin , Chi-Ming Yang , Chun-Lin Chang , Chih-Hong Hwang
- Applicant: Nai-Han Cheng , Chin-Hsiang Lin , Chi-Ming Yang , Chun-Lin Chang , Chih-Hong Hwang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01J37/317
- IPC: H01J37/317
Abstract:
An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
Public/Granted literature
- US20130075623A1 MULTI-ION BEAM IMPLANTATION APPARATUS AND METHOD Public/Granted day:2013-03-28
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