发明授权
US08592792B2 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride
有权
异质结装置包括半导体氧化物和电阻率切换氧化物或氮化物
- 专利标题: Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride
- 专利标题(中): 异质结装置包括半导体氧化物和电阻率切换氧化物或氮化物
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申请号: US13553963申请日: 2012-07-20
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公开(公告)号: US08592792B2公开(公告)日: 2013-11-26
- 发明人: Tanmay Kumar , Scott Brad Herner
- 申请人: Tanmay Kumar , Scott Brad Herner
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk 3D LLC
- 当前专利权人: SanDisk 3D LLC
- 当前专利权人地址: US CA Milpitas
- 代理机构: Dugan & Dugan, PC
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L47/00
摘要:
A monolithic three dimensional memory array is provided that includes a first memory level formed above a substrate, and a second memory level monolithically formed above the first memory level. The first memory level includes a first plurality of substantially parallel, substantially coplanar conductors extending in a first direction, a second plurality of substantially parallel, substantially coplanar conductors extending in a second direction, the second direction different from the first direction, the second conductors above the first conductors, and a first plurality of devices. Each of the first plurality of devices is disposed between one of the first conductors and one of the second conductors, and includes a resistivity-switching binary metal oxide or nitride compound and a silicon, germanium, or silicon-germanium alloy resistor of a single conductivity type. Numerous other aspects are provided.