发明授权
- 专利标题： Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film
- 专利标题（中）： 薄膜，其形成方法以及包含该薄膜的半导体发光元件
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申请号： US13500931申请日： 2010-10-07
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公开(公告)号： US08592810B2公开(公告)日： 2013-11-26
- 发明人: Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
- 申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
- 申请人地址： JP Miyagi JP Kyoto
- 专利权人： National University Corporation Tohoku University,Rohm Co., Ltd.
- 当前专利权人： National University Corporation Tohoku University,Rohm Co., Ltd.
- 当前专利权人地址： JP Miyagi JP Kyoto
- 代理机构： Morgan, Lewis & Bockius LLP
- 优先权： JP2009-235346 20091009
- 国际申请： PCT/JP2010/067637 WO 20101007
- 国际公布： WO2011/043414 WO 20110414
- 主分类号： H01L21/365
- IPC分类号： H01L21/365
摘要：
It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.