Invention Grant
- Patent Title: Active matrix substrate and display panel
- Patent Title (中): 有源矩阵基板和显示面板
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Application No.: US13697106Application Date: 2011-02-14
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Publication No.: US08592811B2Publication Date: 2013-11-26
- Inventor: Masahiko Suzuki , Yoshimasa Chikama , Yuuji Mizuno , Yoshifumi Ohta , Tokuo Yoshida , Okifumi Nakagawa , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Tetsuya Yamashita
- Applicant: Masahiko Suzuki , Yoshimasa Chikama , Yoshifumi Ohta , Tokuo Yoshida , Okifumi Nakagawa , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Tetsuya Yamashita , Hinae Mizuno
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-109411 20100511
- International Application: PCT/JP2011/000808 WO 20110214
- International Announcement: WO2011/142064 WO 20111117
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L27/12 ; H01L27/088 ; H01L29/06 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; G02F1/136
Abstract:
An active matrix substrate (20a) includes a plurality of pixel electrodes (18a) arranged in a matrix, and a plurality of TFTs (5) each connected to a corresponding one of the pixel electrodes (18a), and each including a gate electrode (11a) provided on an insulating substrate (10a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (16a) provided on the gate insulating film (12a) and having a channel region (C) overlapping the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) of copper or copper alloy provided on the gate insulating film (12a) and separated from each other by the channel region (C) of the semiconductor layer (16a). The semiconductor layer (16a) is formed of an oxide semiconductor and covers the source electrode (15aa) and the drain electrode (15b).
Public/Granted literature
- US20130207114A1 ACTIVE MATRIX SUBSTRATE AND DISPLAY PANEL Public/Granted day:2013-08-15
Information query
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