- 专利标题: Semiconductor device and method for manufacturing same
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申请号: US13235302申请日: 2011-09-16
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公开(公告)号: US08592917B2公开(公告)日: 2013-11-26
- 发明人: Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
- 申请人: Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Patterson & Sheridan, LLP
- 优先权: JP2010-210476 20100921; JP2011-177584 20110815
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.
公开/授权文献
- US20120074461A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日:2012-03-29