发明授权
- 专利标题： Symmetrically switchable spin-transfer-torque magnetoresistive device
- 专利标题（中）： 对称可切换自旋传递扭矩磁阻器件
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申请号： US13360530申请日： 2012-01-27
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公开(公告)号： US08592929B2公开(公告)日： 2013-11-26
- 发明人: Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人： Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/02
摘要：
A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance layer (SABL) near the free layer of the MTJ reduces a first switching current Ic(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current Ic(ap-p) without increasing the average switching current of the device. The SABL may be a non-magnetic switching asymmetry balance layer (NM-SABL) and/or a magnetic switching asymmetry balance layer (M-SABL).