发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12976091申请日： 2010-12-22
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公开(公告)号： US08593000B2公开(公告)日： 2013-11-26
- 发明人: Fumio Ushida , Shigeki Yoshida
- 申请人： Fumio Ushida , Shigeki Yoshida
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2009-294650 20091225
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/76
摘要：
A semiconductor device includes an alignment mark formed over a semiconductor substrate and an inhibition pattern arranged over the alignment mark with a pattern edge of the inhibition pattern located in a mark functional region of the alignment mark in order to inhibit the alignment mark being recognized as such by an image detector of an exposure device.
公开/授权文献
- US20110156286A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-06-30
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